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Research
Interest and efforts were concentrated on the crystal
growth and characterization of III-V compound thin
layered heterostructures and devices: Modeling of
crystal growth processes at low temperatures, Liquid
Phase Epitaxy at extremely low temperatures for
successful crystal growth of high quality InAsSb/ InAs
and GaInAsSb/ InAs thin film heterostructures for
mid-infrared (2-5um) applications, Characterization of
InAsSb/InAs photodetectors for mid-infrared fiber optic
communications.
Teaching
Taught the following physics courses: General Physics
I and II, Technical Physics I and II, Mathematical
Methods of Physics and Chemistry, Theoretical Mechanics,
Physics of Strained-Layer Low-Dimensional Structures,
Semiconductor Physics & Technology. Laboratory courses:
General and Technical Physics I and II.
Selected Papers
- Popov A.S., Koinova A.M., Trifonova E.P.,
Tzeneva S.L., “Thick LPE Layers of InAs1-xSbx for 3 -
5 µm Optoelectronic Applications“, Crystal Research
and Technology, v. 33, p. 737-743 (1998).
- Popov A.S., Koinova A.M., Tzeneva S.L., “The
In-As-Sb Phase Diagram and LPE Growth of InAsSb Layers
on InAs at Extremely Low Temperatures“, J.Crystal.
Growth , v.186, '3, p. 338-343 (1998).
- Andreev V.M., Egorov B.V., Koinova A.M.,
Landratov V.M., Rumjantzev V.D., Saradjishvili H.M.,
“High-Effective Informational-Energetical AlGaAs/GaAs
Photodetectors for Fiber-Optic Communication Systems”,
Fiz. Tech. Poluprov., v. 20, (3) p.435-439 (1986).
Last update:
Wednesday May 11, 2005 |
